Abstract
The growth of self-assisted InAs nanowires (NWs) by molecular beam epitaxy (MBE) on Si(111) is studied for different growth parameters and substrate preparations. The thickness of the oxide layer present on the Si(111) surface is observed to play a dominant role. Systematic use of different pre-treatment methods provides information on the influence of the oxide on the NW morphology and growth rates, which can be used for optimizing the growth conditions. We show that it is possible to obtain 100% growth of vertical NWs and no parasitic bulk structures between the NWs by optimizing the oxide thickness. For a growth temperature of 460°C and a V/III ratio of 320 an optimum oxide thickness of 9 ± 3 Å is found.
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