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Abstract
We review principles and trends in the use of
semiconductor nanowires as gain media for stimulated
emission and lasing. Semiconductor nanowires have recently
been widely studied for use in integrated optoelectronic
devices, such as light-emitting diodes (LEDs),
solar cells, and transistors. Intensive research has also
been conducted in the use of nanowires for subwavelength
laser systems that take advantage of their quasione-
dimensional (1D) nature, flexibility in material choice
and combination, and intrinsic optoelectronic properties.
First, we provide an overview on using quasi-1D nanowire
systems to realize subwavelength lasers with efficient, directional,
and low-threshold emission. We then describe
the state of the art for nanowire lasers in terms of materials,
geometry, andwavelength tunability.Next,we present
the basics of lasing in semiconductor nanowires, define
the key parameters for stimulated emission, and introduce
the properties of nanowires. We then review advanced
nanowire laser designs from the literature. Finally,
we present interesting perspectives for low-threshold
nanoscale light sources and optical interconnects. We intend
to illustrate the potential of nanolasers inmany applications,
such as nanophotonic devices that integrate electronics
and photonics for next-generation optoelectronic
devices. For instance, these building blocks for nanoscale
photonics can be used for data storage and biomedical
applications when coupled to on-chip characterization
tools. These nanoscale monochromatic laser light sources
promise breakthroughs in nanophotonics, as they can operate
at room temperature, can potentially be electrically
driven, and can yield a better understanding of intrinsic
nanomaterial properties and surface-state effects in lowdimensional
semiconductor systems.
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