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Abstract
Wide band gap semiconductors of pure and Cr (5, 10, 15 and 20 %) doped SrMoO^sub 4^ compounds were synthesized by chemical precipitation method. Powder X-ray diffraction analysis confirms scheelite type tetragonal crystal structure of the compounds. Metal oxide vibrations of the prepared compounds were identified by Fourier transform infra red spectroscopy. Laser Raman spectral studies elucidated the presence of local order- disorder parameters in Cr doped SrMoO^sub 4^ compounds. Oxidation state of elements present in a compound, chemical composition and the presence of oxygen vacancy were analyzed by X-ray photoelectron spectroscopy. Electron microscopy studies reveal the high degree of agglomeration and change in shape of particles while increasing dopant concentration in SrMoO^sub 4^ system. Optical absorption spectra evidence the distinctive shift in absorption peak and exhibit red shift. The presence of paramagnetic Cr^sup 3+^ ion in the host lattice was identified with electron paramagnetic resonance analysis. The magnetization studies reveal the effect of carrier doping on SrMoO^sub 4^ compounds by exhibiting paramagnetic to saturated ferromagnetic phase transition. The presence of excess carriers by doping leads to Cr-Cr interactions and results in antiferromagnetic ordering in highly doped compounds and the enhancement of magnetic moment have been explained in terms of RKKY interaction theory. The inducement of ferromagnetic behavior by doping Cr in SrMoO^sub 4^ compounds reveal the possibility of multifunctional behaviour and showing their prompt candidature for the fabrication of optoelectronic and spintronics devices.