Content area
Abstract
The properties of vanadium-doped indium oxide (IVO) deposited at room temperature as a transparent conductor for inverted polymer solar cells have been investigated as a function of the vanadium doping concentration. IVO film prepared with V doping concentration of 0.03% showed optimal properties for use as a transparent conductor with figure of merit of 4.35 × 10-3 Ohm-1, related to altered band alignment between the Fermi level and conduction-band minimum. In the optimal optoelectrical conditions for the IVO film, performance optimization of PTB7:PC70BM inverted polymer solar cells resulted in maximum power conversion efficiency of 4.7 ± 0.4% under simulated air mass 1.5 global illumination at 100 mW/cm2.
Details
Title
Properties of Vanadium-Doped Indium Oxide Deposited at Room Temperature as Transparent Conductor for Inverted Polymer Solar Cells
Author
Choi, Min-jun 1 ; Lim, Keun Yong 2 ; Park, Hyun-woo 1 ; Kim, Han-ki 3 ; Hwang, Do Kyung 4 ; Lim, Sung-jin 5 ; Shim, Jae Won 5 ; Chung, Kwun-bum 1
1 Division of Physics and Semiconductor Science, Dongguk University, Seoul, Republic of Korea
2 Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin, Republic of Korea; Materials and Life Science Research Division, Korea Institute of Science and Technology (KIST), Seoul, Republic of Korea
3 Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin, Republic of Korea
4 Materials and Life Science Research Division, Korea Institute of Science and Technology (KIST), Seoul, Republic of Korea
5 Department of Electronics and Electrical Engineering, Dongguk University, Seoul, Republic of Korea
1 Division of Physics and Semiconductor Science, Dongguk University, Seoul, Republic of Korea
2 Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin, Republic of Korea; Materials and Life Science Research Division, Korea Institute of Science and Technology (KIST), Seoul, Republic of Korea
3 Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin, Republic of Korea
4 Materials and Life Science Research Division, Korea Institute of Science and Technology (KIST), Seoul, Republic of Korea
5 Department of Electronics and Electrical Engineering, Dongguk University, Seoul, Republic of Korea
Pages
5797-5803
Publication year
2017
Publication date
Oct 2017
ISSN
0361-5235
e-ISSN
1543-186X
Source type
Scholarly Journal
Language of publication
English
ProQuest document ID
1934214142
Copyright
Journal of Electronic Materials is a copyright of Springer, 2017.