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Abstract
Despite intensive investigations of Bi2Se3 in past few years, the size and nature of the bulk energy band gap of this well-known 3D topological insulator still remain unclear. Here we report on a combined magneto-transport, photoluminescence and infrared transmission study of Bi2Se3, which unambiguously shows that the energy band gap of this material is direct and reaches Eg = (220 ± 5) meV at low temperatures.
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Details
1 Laboratoire National des Champs Magnétiques Intenses, CNRS-UGA-UPS-INSA-EMFL, Grenoble, France
2 Department of Physics, Missouri University of Science and Technology, Rolla, USA
3 Institute of Electronic Materials Technology, Warsaw, Poland
4 Institute of Electronic Materials Technology, Warsaw, Poland; Institute of Physics, Polish Academy of Science, Warsaw, Poland
5 CEITEC MU, Masaryk University, Faculty of Science, Brno, Czech Republic
6 Institute of Applied Physics and Mathematics, Faculty of Chemical Technology, University of Pardubice, Pardubice, Czech Republic
7 Laboratoire National des Champs Magnétiques Intenses, CNRS-UGA-UPS-INSA-EMFL, Grenoble, France; Institute of Physics, Charles University in Prague, Prague, Czech Republic