Content area
Abstract
In this paper, CuSbS2 thin films were prepared by a facile and environmental-friendly chemical solution method at low temperature. The effect of sulfurization temperature was studied. The properties of CuSbS2 thin films were investigated by X-ray diffraction, scanning electron microscopy, UV–Vis and photocurrent response measurement. The results indicated CuSbS2 thin films sulfurized at 350 °C showed better crystallinity and no impurity phase. The as-prepared CuSbS2 film had a band gap of 1.5 eV and an obvious photoconductivity.
Details
Title
Preparation of CuSbS2 thin films by a facile and low-cost chemical solution method
Author
Wang, Wei 1 ; Hao, Lingyun 1 ; Zhang, Wei 2 ; Lin, Qing 2 ; Zhang, Xiaojuan 2 ; Tang, Zhengxia 2
1 School of Materials Engineering, Jinling Institute of Technology, Nanjing, China; Jiangsu Key Laboratory of Advanced Structural Materials and Application Technology, Nanjing, China
2 School of Materials Engineering, Jinling Institute of Technology, Nanjing, China
1 School of Materials Engineering, Jinling Institute of Technology, Nanjing, China; Jiangsu Key Laboratory of Advanced Structural Materials and Application Technology, Nanjing, China
2 School of Materials Engineering, Jinling Institute of Technology, Nanjing, China
Pages
4075-4079
Publication year
2018
Publication date
Mar 2018
ISSN
09574522
e-ISSN
1573482X
Source type
Scholarly Journal
Language of publication
English
ProQuest document ID
1970874450
Copyright
Journal of Materials Science: Materials in Electronics is a copyright of Springer, (2017). All Rights Reserved.