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Abstract
Perovskite solar cells with a planar p-i-n device structure offer easy processability at low temperatures, suitable for roll-to-roll fabrication on flexible substrates. Herein we investigate different hole transport layers (solution processed NiOx, sputtered NiOx, PEDOT:PSS) in planar p-i-n perovskite solar cells using the triple cation lead halide perovskite Cs0.08(MA0.17FA0.83)0.92Pb(I0.83Br0.17)3 as absorber layer. Overall, reproducible solar cell performances with power conversion efficiencies up to 12.8% were obtained using solution processed NiOx as hole transport layer in the devices. Compared to that, devices with PEDOT:PSS as hole transport layer yield efficiencies of approx. 8.4%. Further improvement of the fill factor was achieved by the use of an additional zinc oxide nanoparticle layer between the PC60BM film and the Ag electrode.
Details
; Mangalam, Jimmy 1
; Kunert, Birgit 2 ; Coclite, Anna Maria 2
; Bauch, Martin 3 ; Dimopoulos, Theodoros 3 ; Trimmel, Gregor 1
1 Institute for Chemistry and Technology of Materials (ICTM), NAWI Graz, Graz University of Technology, Graz, Austria
2 Institute of Solid State Physics, NAWI Graz, Graz University of Technology, Graz, Austria
3 AIT Austrian Institute of Technology, Center for Energy, Photovoltaic Systems, Vienna, Austria