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Abstract
We studied the spin-transfer torque (STT) in graphene based normal-metal/topological-insulator/ferromagnet heterostructures (N/TI/F), which is induced by the helical spin-polarized current in the quantum spin Hall insulator. We found that the STT is comparable in magnitude to the STT in ferromagnetic-normal- ferromagnetic graphene junction, while not requiring additional ferromagnetic layer with fixed magnetization, which makes it advantageous for the manipulation of magnetic devices in spintronics. More interestingly, the STT is very robust in our proposed nanostructure, as it is immune to changes in the geometry due to an asymmetrically notch or the presence of random nanopores in the quantum spin Hall insulator. Our theoretical prediction suggests that graphene based quantum spin Hall insulator could be used for very efficient magnetization manipulation for magnetic materials.
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Details
1 School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, People’s Republic of China
2 Department of Physics, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong, People’s Republic of China; City University of Hong Kong Shenzhen Research Institute, Shenzhen, People’s Republic of China