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Mechanisms of dislocation reduction in GaN using an intermediate temperature interlayer
Mechanisms of dislocation reduction in GaN using an intermediate temperature interlayerBourret-Courchesne, E D; Yu, K M; Benamara, M; Liliental-Weber, Z; Washburn, J.
Journal of Electronic Materials; Warrendale Vol. 30, Iss. 11, (Nov 2001): 1417.
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Title
Mechanisms of dislocation reduction in GaN using an intermediate temperature interlayer
Author
Bourret-Courchesne, E D; Yu, K M; Benamara, M; Liliental-Weber, Z; Washburn, J
Pages
1417
Publication year
2001
Publication date
Nov 2001
ISSN
0361-5235
e-ISSN
1543-186X
Source type
Scholarly Journal
Language of publication
English
ProQuest document ID
204864321
Copyright
Copyright Minerals, Metals & Materials Society Nov 2001





