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Field Effect Transistors with Sub-Micrometer Gate Lengths Fabricated from LaAlO\(_3\)-SrTiO\(_3\)-Based Heterostructures
Woltmann, C; Harada, T; Boschker, H; Srot, V; van Aken, P A; et al. arXiv.org, Nov 24, 2015.You might have access to this document
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