Abstract

We report on the conduction mechanisms of novel Ru/MgO/Cu and Ru/MgO/Ta resistive switching memory (RSM) devices. Current-voltage (I–V) measurements revealed Schottky emission (SE) as the dominant conduction mechanism in the high resistance state (HRS), which was validated by varying temperatures and transmission electron microscopy (TEM) results. Retention of more than 10 years at 85 °C was obtained for both Ru/MgO/Ta and Ru/MgO/Cu RSM devices. In addition, annealing processes greatly improved the consistency of HRS and LRS switching paths from cycle to cycle, exhibiting an average ON/OFF ratio of 102. Further TEM studies also highlighted the difference in crystallinity between different materials in Ru/MgO/Cu RSM devices, confirming Cu filament identification which was found to be 10 nm in width.

Details

Title
Conduction Mechanisms on High Retention Annealed MgO-based Resistive Switching Memory Devices
Author
Loy, D J J 1   VIAFID ORCID Logo  ; Dananjaya, P A 2 ; Hong, X L 2 ; Shum, D P 3 ; Lew, W S 2   VIAFID ORCID Logo 

1  School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore; Globalfoundries Singapore Pte Ltd, Singapore, Singapore 
2  School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore 
3  Globalfoundries Singapore Pte Ltd, Singapore, Singapore 
Pages
1-9
Publication year
2018
Publication date
Oct 2018
Publisher
Nature Publishing Group
e-ISSN
20452322
Source type
Scholarly Journal
Language of publication
English
DOI
https://doi.org/10.1038/s41598-018-33198-0
ProQuest document ID
2116054774
Copyright
© 2018. This work is published under http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.