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© 2015. This work is licensed under http://creativecommons.org/licenses/by/3.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.

Abstract

Ti-supported RuN thin films, synthesized by rf-magnetron sputtering, have been electrochemically characterized, focusing in particular to their charge-storage capacity, and to the mechanisms that influence this important property, in view, e.g., of applications in supercapacitors. Based on cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS) data, a deconvolution of non-faradic and faradic contributions has been attempted, and a mechanism for the charging/discharging process has been proposed.

Details

Title
Charge-Storage Process of Stoichiometric and Nanostructured Ruthenium Nitride Thin Films
Author
Rosestolato, Davide; Battaglin, Giancarlo; Ferro, Sergio
Pages
11-21
Publication year
2015
Publication date
Dec 2015
Publisher
MDPI AG
e-ISSN
23130105
Source type
Scholarly Journal
Language of publication
English
ProQuest document ID
2124707967
Copyright
© 2015. This work is licensed under http://creativecommons.org/licenses/by/3.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.