Content area
Abstract
The DICE flip-flop has been rendered ineffective in deep-submicron technology nodes (e.g. 65 nm and 28 nm) due to charge sharing when exposed to single event strikes. This paper presents a new single event upset tolerant flip-flop design by applying the hardening technique on DICE at the layout level. This approach is an alternative to existing Layout Design through Error-Aware Transistor Positioning (LEAP); it also re-places transistors in master and slave DICE latches in the zigzag fashion in the layout. Both computer simulations and heavy-ion experimental results demonstrate that our proposed layout design has no single event upset errors under normal strikes until LET = 37 MeV·cm2/mg compared to the traditional DICE structure.
Details
Title
A Layout-Based Rad-Hard DICE Flip-Flop Design
Author
Wang, Haibin 1
; Dai, Xixi 2 ; Younis Mohammed Younis Ibrahim 2 ; Sun, Hongwen 2 ; Nofal, Issam 3 ; Cai, Li 4 ; Guo, Gang 4 ; Shen, Zicai 5 ; Chen, Li 6
1 College of IoT Engineering, Hohai University, Changzhou, China; College of Engineering, University of Saskatchewan, Saskatoon, Canada; Innovation Foundation of Radiation Application, China Institute of Atomic Energy, Beijing, China
2 College of IoT Engineering, Hohai University, Changzhou, China
3 iRoC Technologies, Grenoble, France
4 Innovation Foundation of Radiation Application, China Institute of Atomic Energy, Beijing, China
5 Beijing Institute of Spacecraft Environment Engineering, Beijing, China
6 College of Engineering, University of Saskatchewan, Saskatoon, Canada
; Dai, Xixi 2 ; Younis Mohammed Younis Ibrahim 2 ; Sun, Hongwen 2 ; Nofal, Issam 3 ; Cai, Li 4 ; Guo, Gang 4 ; Shen, Zicai 5 ; Chen, Li 6 1 College of IoT Engineering, Hohai University, Changzhou, China; College of Engineering, University of Saskatchewan, Saskatoon, Canada; Innovation Foundation of Radiation Application, China Institute of Atomic Energy, Beijing, China
2 College of IoT Engineering, Hohai University, Changzhou, China
3 iRoC Technologies, Grenoble, France
4 Innovation Foundation of Radiation Application, China Institute of Atomic Energy, Beijing, China
5 Beijing Institute of Spacecraft Environment Engineering, Beijing, China
6 College of Engineering, University of Saskatchewan, Saskatoon, Canada
Pages
111-117
Publication year
2019
Publication date
Feb 2019
ISSN
0923-8174
e-ISSN
1573-0727
Source type
Scholarly Journal
Language of publication
English
ProQuest document ID
2168405143
Copyright
Journal of Electronic Testing is a copyright of Springer, (2019). All Rights Reserved.