Abstract

The performance and reliability of large-area graphene grown by chemical vapor deposition are often limited by the presence of wrinkles and the transfer-process-induced polymer residue. Here, we report a transfer approach using paraffin as a support layer, whose thermal properties, low chemical reactivity and non-covalent affinity to graphene enable transfer of wrinkle-reduced and clean large-area graphene. The paraffin-transferred graphene has smooth morphology and high electrical reliability with uniform sheet resistance with ~1% deviation over a centimeter-scale area. Electronic devices fabricated on such smooth graphene exhibit electrical performance approaching that of intrinsic graphene with small Dirac points and high carrier mobility (hole mobility = 14,215 cm2 V−1 s−1; electron mobility = 7438 cm2 V−1 s−1), without the need of further annealing treatment. The paraffin-enabled transfer process could open realms for the development of high-performance ubiquitous electronics based on large-area two-dimensional materials.

The transfer process of as-grown graphene limits its electrical performance and reliability. Here, the authors develop a transfer approach using paraffin as a support layer and obtain wrinkle-reduced and clean large-area graphene retaining high mobility.

Details

Title
Paraffin-enabled graphene transfer
Author
Leong Wei Sun 1   VIAFID ORCID Logo  ; Wang, Haozhe 1   VIAFID ORCID Logo  ; Yeo Jingjie 2 ; Martin-Martinez, Francisco J 3 ; Ahmad, Zubair 1   VIAFID ORCID Logo  ; Pin-Chun, Shen 1 ; Mao Yunwei 4 ; Palacios, Tomas 1 ; Buehler, Markus J 3 ; Jin-Yong, Hong 5 ; Kong, Jing 1 

 Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, Cambridge, USA (GRID:grid.116068.8) (ISNI:0000 0001 2341 2786) 
 Tufts University, Department of Biomedical Engineering, Medford, USA (GRID:grid.429997.8) (ISNI:0000 0004 1936 7531); Massachusetts Institute of Technology, Laboratory for Atomistic and Molecular Mechanics, Cambridge, USA (GRID:grid.116068.8) (ISNI:0000 0001 2341 2786); Institute of High Performance Computing, A*STAR, 1 Fusionopolis Way, Singapore, Singapore (GRID:grid.418742.c) (ISNI:0000 0004 0470 8006) 
 Massachusetts Institute of Technology, Laboratory for Atomistic and Molecular Mechanics, Cambridge, USA (GRID:grid.116068.8) (ISNI:0000 0001 2341 2786) 
 Massachusetts Institute of Technology, Department of Mechanical Engineering, Cambridge, USA (GRID:grid.116068.8) (ISNI:0000 0001 2341 2786) 
 Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, Cambridge, USA (GRID:grid.116068.8) (ISNI:0000 0001 2341 2786); Carbon Industry Frontier Research Center, Korea Research Institute of Chemical Technology, Daejeon, Republic of Korea (GRID:grid.29869.3c) (ISNI:0000 0001 2296 8192) 
Publication year
2019
Publication date
Dec 2019
Publisher
Nature Publishing Group
e-ISSN
20411723
Source type
Scholarly Journal
Language of publication
English
ProQuest document ID
2184193222
Copyright
This work is published under http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.