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Abstract
The performance and reliability of large-area graphene grown by chemical vapor deposition are often limited by the presence of wrinkles and the transfer-process-induced polymer residue. Here, we report a transfer approach using paraffin as a support layer, whose thermal properties, low chemical reactivity and non-covalent affinity to graphene enable transfer of wrinkle-reduced and clean large-area graphene. The paraffin-transferred graphene has smooth morphology and high electrical reliability with uniform sheet resistance with ~1% deviation over a centimeter-scale area. Electronic devices fabricated on such smooth graphene exhibit electrical performance approaching that of intrinsic graphene with small Dirac points and high carrier mobility (hole mobility = 14,215 cm2 V−1 s−1; electron mobility = 7438 cm2 V−1 s−1), without the need of further annealing treatment. The paraffin-enabled transfer process could open realms for the development of high-performance ubiquitous electronics based on large-area two-dimensional materials.
The transfer process of as-grown graphene limits its electrical performance and reliability. Here, the authors develop a transfer approach using paraffin as a support layer and obtain wrinkle-reduced and clean large-area graphene retaining high mobility.
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1 Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, Cambridge, USA (GRID:grid.116068.8) (ISNI:0000 0001 2341 2786)
2 Tufts University, Department of Biomedical Engineering, Medford, USA (GRID:grid.429997.8) (ISNI:0000 0004 1936 7531); Massachusetts Institute of Technology, Laboratory for Atomistic and Molecular Mechanics, Cambridge, USA (GRID:grid.116068.8) (ISNI:0000 0001 2341 2786); Institute of High Performance Computing, A*STAR, 1 Fusionopolis Way, Singapore, Singapore (GRID:grid.418742.c) (ISNI:0000 0004 0470 8006)
3 Massachusetts Institute of Technology, Laboratory for Atomistic and Molecular Mechanics, Cambridge, USA (GRID:grid.116068.8) (ISNI:0000 0001 2341 2786)
4 Massachusetts Institute of Technology, Department of Mechanical Engineering, Cambridge, USA (GRID:grid.116068.8) (ISNI:0000 0001 2341 2786)
5 Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, Cambridge, USA (GRID:grid.116068.8) (ISNI:0000 0001 2341 2786); Carbon Industry Frontier Research Center, Korea Research Institute of Chemical Technology, Daejeon, Republic of Korea (GRID:grid.29869.3c) (ISNI:0000 0001 2296 8192)