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Abstract
Hybrid metal/semiconductor nano-heterostructures with strong exciton-plasmon coupling have been proposed for applications in hot carrier optoelectronic devices. However, the performance of devices based on this concept has been limited by the poor efficiency of plasmon-hot electron conversion at the metal/semiconductor interface. Here, we report that the efficiency of interfacial hot excitation transfer can be substantially improved in hybrid metal semiconductor nano-heterostructures consisting of perovskite semiconductors. In Ag–CsPbBr3 nanocrystals, both the plasmon-induced hot electron and the resonant energy transfer processes can occur on a time scale of less than 100 fs with quantum efficiencies of 50 ± 18% and 15 ± 5%, respectively. The markedly high efficiency of hot electron transfer observed here can be ascribed to the increased metal/semiconductor coupling compared with those in conventional systems. These findings suggest that hybrid architectures of metal and perovskite semiconductors may be excellent candidates to achieve highly efficient plasmon-induced hot carrier devices.
Proposed devices exploiting the strong exciton-plasmon coupling are limited by the low efficiency of hot carrier generation. Here, Huang et al. study the efficiencies of different plasmon-hot electron conversion processes in metal/perovskite semiconductor nanocrystals to address this problem.
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1 Nanjing University, National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing, China (GRID:grid.41156.37) (ISNI:0000 0001 2314 964X)
2 Nanjing University, College of Engineering and Applied Sciences, Nanjing, China (GRID:grid.41156.37) (ISNI:0000 0001 2314 964X); Nanjing Tech University, Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing, China (GRID:grid.412022.7) (ISNI:0000 0000 9389 5210)
3 Nanjing University, National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing, China (GRID:grid.41156.37) (ISNI:0000 0001 2314 964X); University of Science and Technology of China, Synergetic Innovation Center in Quantum Information and Quantum Physics, Hefei, China (GRID:grid.59053.3a) (ISNI:0000000121679639)
4 University of Science and Technology of China, Hefei National Laboratory for Physical Sciences at the Microscale, and Department of Chemical Physics, Hefei, China (GRID:grid.59053.3a) (ISNI:0000000121679639)
5 Nanjing University, College of Engineering and Applied Sciences, Nanjing, China (GRID:grid.41156.37) (ISNI:0000 0001 2314 964X)
6 Nanjing University, National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing, China (GRID:grid.41156.37) (ISNI:0000 0001 2314 964X); University of Science and Technology of China, Synergetic Innovation Center in Quantum Information and Quantum Physics, Hefei, China (GRID:grid.59053.3a) (ISNI:0000000121679639); University of Arkansas, Department of Physics, Fayetteville, USA (GRID:grid.411017.2) (ISNI:0000 0001 2151 0999)