Content area

Abstract

A typical multiferroic manganese oxide of HoMnO3 was partially substituted by Fe at Mn site. Orthogonal crystalline phase of HoMn1−xFexO3 was synthesized at normal pressure. This finding has changed the conventional method of synthesizing orthogonal crystalline phase of rare-earth manganese oxides under high-temperature and high-pressure. The doping of iron ions suppresses the formation of hexagonal phase as revealed from X-ray diffraction, Morphology analysis, Raman spectrum and X-ray photoelectron spectroscopy. The doping of Fe3+ into HoMnO3 causes changes in the space group of the sample and ferroelectricity at room temperature. There are two phases with a ferroelectric space group of \[{P6}_{3}cm\] and a paraelectric one of Pnma coexisted in Ho\[{\text{Mn}}_{1-x}{Fe}_{x}{O}_{3}\] polycrystalline with x < 0.15 as revealed by the Rietveld refinement. With increasing of doping concentration, the proportion of \[{P6}_{3}cm\] gradually decreases. When x > 0.15, the phase with \[{P6}_{3}cm\] space group disappears, and samples have only one crystalline phase Pnma. We found that the sample remained ferroelectricity at room temperature in the process of changing the doping concentration. The ferroelectric property disappears until it completely changed to the orthogonal phase. The synthesis of orthogonal HoMnO3 at normal pressure has not been previously reported and potentially open up abroad research and application prospects.

Details

Title
Structural and ferroelectric properties of orthogonal crystalline in Fe-doped HoMnO3 synthesized at normal pressure
Author
Wu, Yizhang 1 ; Xie, Qiyun 2 ; Li, Meng 1 ; Sun, Xiaofan 1 ; Hong-Ling, Cai 1 ; Wu, X S 1 

 Collaborative Innovation Center of Advanced Microstructures, Lab of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, People’s Republic of China 
 Key Lab Radio Frequency & Micronano Elect Jiangsu, Nanjing, Jiangsu, People’s Republic of China 
Pages
7629-7636
Publication year
2019
Publication date
Apr 2019
Publisher
Springer Nature B.V.
ISSN
09574522
e-ISSN
1573482X
Source type
Scholarly Journal
Language of publication
English
ProQuest document ID
2190840271
Copyright
Journal of Materials Science: Materials in Electronics is a copyright of Springer, (2019). All Rights Reserved.