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Abstract
Traditional Resistive Random Access Memory (RRAM) is a metal-insulator-metal (MIM) structure, in which metal oxide is usually used as an insulator. The charge transport mechanism of traditional RRAM is attributed to a metallic filament inside the RRAM. In this paper, we demonstrated a novel RRAM device with no metal inside. The N+-Si/SiOx/P+-Si combination forms a N+IP+ diode structure that is different from traditional MIM RRAM. A large high-resistance/low-resistance window of 1.9 × 104 was measured at room temperature. A favorable retention memory window of 1.2 × 103 was attained for 104 s at 85 °C. The charge transport mechanism of virgin, high- and low-resistance states can be well modeled by the single Shklovskii-Efros percolation mechanism rather than the charge transport in metallic filament. X-ray photoelectron spectroscopy demonstrated that the value of x in SiOx was 0.62, which provided sufficient oxygen vacancies for set/reset RRAM functions.
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Details
1 National Chiao Tung University, Department of Electronics Engineering, Hsinchu, Taiwan (GRID:grid.260539.b) (ISNI:0000 0001 2059 7017)
2 Siberian Branch, Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Novosibirsk, Russia (GRID:grid.415877.8) (ISNI:0000 0001 2254 1834)
3 Siberian Branch, Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Novosibirsk, Russia (GRID:grid.415877.8) (ISNI:0000 0001 2254 1834); Novosibirsk State University, Novosobirsk, Russia (GRID:grid.4605.7) (ISNI:0000000121896553)
4 Siberian Branch, Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Novosibirsk, Russia (GRID:grid.415877.8) (ISNI:0000 0001 2254 1834); Novosibirsk State University, Novosobirsk, Russia (GRID:grid.4605.7) (ISNI:0000000121896553); Novosibirsk State Technical University, Novosibirsk, Russia (GRID:grid.77667.37)