Details
Title
Isolating hydrogen in hexagonal boron nitride bubbles by a plasma treatment
Author
He, Li 1 ; Wang, Huishan 2 ; Chen, Lingxiu 3
; Wang, Xiujun 2 ; Xie, Hong 3 ; Jiang, Chengxin 4 ; Chen, Li 5 ; Elibol, Kenan 6 ; Meyer, Jannik 7
; Watanabe, Kenji 8
; Taniguchi, Takashi 8 ; Wu, Zhangting 9 ; Wang, Wenhui 9 ; Ni, Zhenhua 9 ; Miao, Xiangshui 10 ; Zhang, Chi 10 ; Zhang, Daoli 10
; Wang, Haomin 11
; Xie, Xiaoming 4
1 School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, China; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China; CAS Center for Excellence in Superconducting Electronics (CENSE), Shanghai, China
2 State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China; CAS Center for Excellence in Superconducting Electronics (CENSE), Shanghai, China; Graduate University of the Chinese Academy of Sciences, Beijing, China
3 State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China; CAS Center for Excellence in Superconducting Electronics (CENSE), Shanghai, China
4 State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China; CAS Center for Excellence in Superconducting Electronics (CENSE), Shanghai, China; School of Physical Science and Technology, ShanghaiTech University, Shanghai, China
5 Department of Lithospheric Research, University of Vienna, Vienna, Austria; Electron Microscopy for Materials Research (EMAT), University Antwerpen, Antwerpen, Belgium
6 Faculty of Physics, University of Vienna, Wien, Austria; School of Chemistry, Trinity College Dublin, Dublin 2, Ireland; Advanced Microscopy Laboratory, Centre for Research on Adaptive Nanostructures and Nanodevices, Dublin 2, Ireland
7 Faculty of Physics, University of Vienna, Wien, Austria; Institute for Applied Physics and Natural and Medical Sciences Institute, University of Tübingen, Tübingen, Germany
8 National Institute for Materials Science, Tsukuba, Japan
9 Department of Physics, Southeast University, Nanjing, China
10 School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, China
11 State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China; CAS Center for Excellence in Superconducting Electronics (CENSE), Shanghai, China; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, P.R. China
; Wang, Xiujun 2 ; Xie, Hong 3 ; Jiang, Chengxin 4 ; Chen, Li 5 ; Elibol, Kenan 6 ; Meyer, Jannik 7
; Watanabe, Kenji 8
; Taniguchi, Takashi 8 ; Wu, Zhangting 9 ; Wang, Wenhui 9 ; Ni, Zhenhua 9 ; Miao, Xiangshui 10 ; Zhang, Chi 10 ; Zhang, Daoli 10
; Wang, Haomin 11
; Xie, Xiaoming 4 1 School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, China; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China; CAS Center for Excellence in Superconducting Electronics (CENSE), Shanghai, China
2 State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China; CAS Center for Excellence in Superconducting Electronics (CENSE), Shanghai, China; Graduate University of the Chinese Academy of Sciences, Beijing, China
3 State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China; CAS Center for Excellence in Superconducting Electronics (CENSE), Shanghai, China
4 State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China; CAS Center for Excellence in Superconducting Electronics (CENSE), Shanghai, China; School of Physical Science and Technology, ShanghaiTech University, Shanghai, China
5 Department of Lithospheric Research, University of Vienna, Vienna, Austria; Electron Microscopy for Materials Research (EMAT), University Antwerpen, Antwerpen, Belgium
6 Faculty of Physics, University of Vienna, Wien, Austria; School of Chemistry, Trinity College Dublin, Dublin 2, Ireland; Advanced Microscopy Laboratory, Centre for Research on Adaptive Nanostructures and Nanodevices, Dublin 2, Ireland
7 Faculty of Physics, University of Vienna, Wien, Austria; Institute for Applied Physics and Natural and Medical Sciences Institute, University of Tübingen, Tübingen, Germany
8 National Institute for Materials Science, Tsukuba, Japan
9 Department of Physics, Southeast University, Nanjing, China
10 School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, China
11 State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China; CAS Center for Excellence in Superconducting Electronics (CENSE), Shanghai, China; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, P.R. China
Pages
1-9
Publication year
2019
Publication date
Jun 2019
e-ISSN
20411723
Source type
Scholarly Journal
Language of publication
English
ProQuest document ID
2248356206
Copyright
© 2019. This work is published under http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.