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BaAs3: a narrow gap 2D semiconductor with vacancy-induced semiconductor–metal transition from first principles
Tang, Ping; Jun-Hui, Yuan; Ya-Qian, Song; Xu, Ming; Kan-Hao Xue; et al. Journal of Materials Science Vol. 54, Iss. 19, (Oct 2019): 12676-12687.You might have access to this document
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