Abstract

Strain engineering is a practical method to tune and improve the physical characteristics and properties of two-dimensional materials, due to their large stretchability. Tensile strain dependence of electronic, phonon, and thermoelectric properties of InSe monolayer are systematically studied. We demonstrate that the lattice thermal conductivity can be effectively modulated by applying tensile strain. Tensile strain can enhance anharmonic phonon scattering, giving rise to the enhanced phonon scattering rate, reduced phonon group velocity and heat capacity, and therefore lattice thermal conductivity decreases from 25.9 to 13.1 W/mK when the strain of 6% is applied. The enhanced figure of merit indicates that tensile strain is an effective way to improve the thermoelectric performance of InSe monolayer.

Details

Title
Strain Effect on Thermoelectric Performance of InSe Monolayer
Author
Wang, Qian 1 ; Han, Lihong 1 ; Wu, Liyuan 1 ; Zhang, Tao 2 ; Li, Shanjun 2 ; Lu, Pengfei 1 

 State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing, China 
 College of Electrical Engineering and Information Technology, Sichuan University, Chengdu, China 
Pages
1-9
Publication year
2019
Publication date
Aug 2019
Publisher
Springer Nature B.V.
ISSN
19317573
e-ISSN
1556276X
Source type
Scholarly Journal
Language of publication
English
ProQuest document ID
2275792554
Copyright
Nanoscale Research Letters is a copyright of Springer, (2019). All Rights Reserved., © 2019. This work is published under http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.