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Abstract

The single crystals of triglycine sulpho phosphate (TGS0.74P0.26) were grown by slow evaporation method with 0.6 M of phosphoric acid in the growth solution. The crystal structure of the grown crystal is refined with 0.74 sulphur and 0.26 phosphorous occupancy with the formula of TGS0.74P0.26 using single crystal x-ray diffraction analysis. The dielectric, ferroelectric and pyroelectric properties of the TGS0.74P0.26 single crystals were investigated. The coercive field (Ec) and internal bias field (Ib) values are 8 kV/cm and 1.4 kV/cm, respectively and these values are found increased compared to the pure TGS and also low dielectric loss was observed. The pyroelectric coefficient of TGS0.74P0.26 crystal is 0.023 µC/cm2/°C and the pyroelectric figure of merit for current, voltage and detectivity are Fi = 105 pm/V, Fv = 0.055 m2/C and Fd = 22 µPa−1/2 respectively. Enhanced ferroelectric properties were observed when compared to the pure TGS crystals. The figure of merit for the detectivity (Fd) shows higher values when compared with that of the well-known materials such as PZT (11.5 µPa−1/2) and other lead free materials such as SBN (7.21 µPa−1/2) and CSBN (12 µPa−1/2). With these excellent properties, the TGS0.74P0.26 single crystal can be a promising material for the pyroelectric detector applications.

Details

Title
Enhanced ferroelectric properties and crystal structure of TGS0.74P0.26 single crystals
Author
Sampathkumar Pongiappan 1 ; Karuppannan, Srinivasan 2   VIAFID ORCID Logo 

 Crystal Growth Laboratory, Physics Division, DRDO-BU Center for Life Sciences, Bharathiar University Campus, Coimbatore, Tamil Nadu, India 
 Crystal Growth Laboratory, Physics Division, DRDO-BU Center for Life Sciences, Bharathiar University Campus, Coimbatore, Tamil Nadu, India; Crystal Growth Laboratory, Department of Physics, School of Physical Sciences, Bharathiar University, Coimbatore, Tamil Nadu, India 
Pages
16494-16501
Publication year
2019
Publication date
Sep 2019
Publisher
Springer Nature B.V.
ISSN
09574522
e-ISSN
1573482X
Source type
Scholarly Journal
Language of publication
English
ProQuest document ID
2282739850
Copyright
Journal of Materials Science: Materials in Electronics is a copyright of Springer, (2019). All Rights Reserved.