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Abstract
Two-dimensional topological materials bearing time reversal-breaking magnetic fields support protected one-way edge modes. Normally, these edge modes adhere to physical edges where material properties change abruptly. However, even in homogeneous materials, topology still permits a unique form of edge modes – kink modes – residing at the domain boundaries of magnetic fields within the materials. This scenario, despite being predicted in theory, has rarely been demonstrated experimentally. Here, we report our observation of topologically-protected high-frequency kink modes – kink magnetoplasmons (KMPs) – in a GaAs/AlGaAs two-dimensional electron gas (2DEG) system. These KMPs arise at a domain boundary projected from an externally-patterned magnetic field onto a uniform 2DEG. They propagate unidirectionally along the boundary, protected by a difference of gap Chern numbers (\[\pm1\]) in the two domains. They exhibit large tunability under an applied magnetic field or gate voltage, and clear signatures of nonreciprocity even under weak-coupling to evanescent photons.
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1 Nanoscale Science and Engineering Center, University of California, Berkeley, CA, USA; Center for Nanoscale Materials, Argonne National Laboratory, Argonne, IL, USA
2 Nanoscale Science and Engineering Center, University of California, Berkeley, CA, USA
3 Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, USA
4 National High Magnetic Field Laboratory, Tallahassee, FL, USA
5 Microsoft Quantum Purdue and Birck Nanotechnology Center, Purdue University, West Lafayette, IN, USA
6 Department of Physics and Astronomy and Birck Nanotechnology Center, Purdue University, West Lafayette, IN, USA
7 Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
8 Material Science Division, Argonne National Laboratory, Argonne, IL, USA
9 Microsoft Quantum Purdue, Department of Physics and Astronomy, Birck Nanotechnology Center, Schools of Electrical and Computer Engineering and Materials Engineering, Purdue University, West Lafayette, IN, USA
10 Nanoscale Science and Engineering Center, University of California, Berkeley, CA, USA; Faculties of Sciences and Engineering University of Hong Kong, Hong Kong SAR, PR, China