Abstract

Etching kinetics of swift heavy ions (SHI) tracks in olivine is investigated in frame of experimentally verified numerical approach. The model takes into account variation of induced chemical reactivity of the material around the whole ion trajectory with the nanometric accuracy. This enables a quantitative description of wet chemical etching of SHI tracks of different lengths and orientations towards to the sample surface. It is demonstrated that two different modes of etching, governed by diffusion of etchant molecules and by their reaction with the material must be observed in experiments using techniques with different resolution thresholds. Applicability limits of the optical microscopy for detection of heavy ion parameters by measuring of the lengthwise etching rates of the ion track are discussed.

Details

Title
Dependence of track etching kinetics on chemical reactivity around the ion path
Author
Gorbunov, S A 1 ; Rymzhanov, R A 2 ; Volkov, A E 3 

 P. N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow, Russia 
 Joint Institute for Nuclear Research, Dubna, Moscow Region, Russia; The Institute of Nuclear Physics, Almaty, Kazakhstan 
 P. N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow, Russia; Joint Institute for Nuclear Research, Dubna, Moscow Region, Russia; National Research Centre ‘Kurchatov Institute’, Moscow, Russia; National University of Science and Technology MISiS, Moscow, Russia 
Pages
1-10
Publication year
2019
Publication date
Oct 2019
Publisher
Nature Publishing Group
e-ISSN
20452322
Source type
Scholarly Journal
Language of publication
English
ProQuest document ID
2309515824
Copyright
© 2019. This work is published under http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.