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Abstract

This work reports on the thermoelectric properties of bulk SnS2, which shows a similar composition and layered crystal structure to the extensively studied SnS and SnSe. The synthesis process for mechanical alloying (MA) SnS2 was also investigated. The SnS2 compound was formed in the reaction between SnS and S, after the formation of SnS using Sn and S as raw materials. However, single-phase SnS2 appears to be difficult to obtain by MA because Sn2S3 is produced when milling times are extended. Nevertheless, a pure-phase SnS2 bulk is achieved by further spark plasma sintering. The pristine SnS2 bulk shows an n-type conductive characteristic and a moderate absolute Seebeck coefficient between 100 and 700 μV/K. However, with a low figure of merit value ZT, the thermoelectric property is poor because of the low electrical conductivity of below 0.2 S/cm and the relatively high thermal conductivity of above 1.5 W/mK. Further, the electrical conductivity is enhanced and the thermal conductivity decreases significantly after Ag doping. An enhanced ZT value of 0.01 is achieved which is two times higher than pristine one.

Details

Title
Synthesis process and thermoelectric properties of the layered crystal structure SnS2
Author
Chang, Yi 1   VIAFID ORCID Logo  ; Ruan, Min 2 ; Fu, Li 3 ; Zheng Zhuanghao 3 ; Chen, Yuexing 3 ; Ge Zhenhua 4 ; Fan, Ping 3 

 Shenzhen University, Shenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Optoelectronic Engineering, Shenzhen, China (GRID:grid.263488.3) (ISNI:0000 0001 0472 9649); Kunming University of Science and Technology, Faculty of Materials Science and Engineering, Kunming, China (GRID:grid.218292.2) (ISNI:0000 0000 8571 108X) 
 Shenzhen University, Shenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Optoelectronic Engineering, Shenzhen, China (GRID:grid.263488.3) (ISNI:0000 0001 0472 9649); Shenzhen University, College of Materials Science and Engineering, Shenzhen, China (GRID:grid.263488.3) (ISNI:0000 0001 0472 9649) 
 Shenzhen University, Shenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Optoelectronic Engineering, Shenzhen, China (GRID:grid.263488.3) (ISNI:0000 0001 0472 9649) 
 Kunming University of Science and Technology, Faculty of Materials Science and Engineering, Kunming, China (GRID:grid.218292.2) (ISNI:0000 0000 8571 108X) 
Pages
5425-5433
Publication year
2020
Publication date
Apr 2020
Publisher
Springer Nature B.V.
ISSN
09574522
e-ISSN
1573482X
Source type
Scholarly Journal
Language of publication
English
ProQuest document ID
2380543033
Copyright
Journal of Materials Science: Materials in Electronics is a copyright of Springer, (2020). All Rights Reserved.