Electrical switching between exciton dissociation to exciton funneling in MoSe2/WS2 heterostructure

Abstract

The heterostructure of monolayer transition metal dichalcogenides (TMDCs) provides a unique platform to manipulate exciton dynamics. The ultrafast carrier transfer across the van der Waals interface of the TMDC hetero-bilayer can efficiently separate electrons and holes in the intralayer excitons with a type II alignment, but it will funnel excitons into one layer with a type I alignment. In this work, we demonstrate the reversible switch from exciton dissociation to exciton funneling in a MoSe₂/WS₂ heterostructure, which manifests itself as the photoluminescence (PL) quenching to PL enhancement transition. This transition was realized through effectively controlling the quantum capacitance of both MoSe₂ and WS₂ layers with gating. PL excitation spectroscopy study unveils that PL enhancement arises from the blockage of the optically excited electron transfer from MoSe₂ to WS₂. Our work demonstrates electrical control of photoexcited carrier transfer across the van der Waals interface, the understanding of which promises applications in quantum optoelectronics.

The ultrafast carrier dynamics across the van der Waals interface of transition metal dichalcogenide heterostructures govern the formation and funnelling of excitons. Here, the authors demonstrate a reversible switch from exciton dissociation to exciton funnelling in a MoSe₂/WS₂ heterostructure, which manifests itself as a photoluminescence quenching-to-enhancement transition.