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Abstract
Physical neural networks made of analog resistive switching processors are promising platforms for analog computing. State-of-the-art resistive switches rely on either conductive filament formation or phase change. These processes suffer from poor reproducibility or high energy consumption, respectively. Herein, we demonstrate the behavior of an alternative synapse design that relies on a deterministic charge-controlled mechanism, modulated electrochemically in solid-state. The device operates by shuffling the smallest cation, the proton, in a three-terminal configuration. It has a channel of active material, WO3. A solid proton reservoir layer, PdHx, also serves as the gate terminal. A proton conducting solid electrolyte separates the channel and the reservoir. By protonation/deprotonation, we modulate the electronic conductivity of the channel over seven orders of magnitude, obtaining a continuum of resistance states. Proton intercalation increases the electronic conductivity of WO3 by increasing both the carrier density and mobility. This switching mechanism offers low energy dissipation, good reversibility, and high symmetry in programming.
Designing energy efficient neural networks based on synaptic memristor devices remains a challenge. Here, the authors propose the development of a 3-terminal WO3 synaptic device based on proton intercalation in inorganic materials by leveraging a solid proton reservoir layer PdHx as the gate terminal.
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1 Massachusetts Institute of Technology, Department of Nuclear Science and Engineering, Cambridge, USA (GRID:grid.116068.8) (ISNI:0000 0001 2341 2786)
2 Massachusetts Institute of Technology, Department of Materials Science and Engineering, Cambridge, USA (GRID:grid.116068.8) (ISNI:0000 0001 2341 2786)
3 Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, Cambridge, USA (GRID:grid.116068.8) (ISNI:0000 0001 2341 2786)
4 Massachusetts Institute of Technology, Department of Mechanical Engineering, Cambridge, USA (GRID:grid.116068.8) (ISNI:0000 0001 2341 2786)
5 Brookhaven National Laboratory, National Synchrotron Light Source II, Upton, USA (GRID:grid.202665.5) (ISNI:0000 0001 2188 4229)
6 Massachusetts Institute of Technology, Department of Nuclear Science and Engineering, Cambridge, USA (GRID:grid.116068.8) (ISNI:0000 0001 2341 2786); Massachusetts Institute of Technology, Department of Materials Science and Engineering, Cambridge, USA (GRID:grid.116068.8) (ISNI:0000 0001 2341 2786)