It appears you don't have support to open PDFs in this web browser. To view this file, Open with your PDF reader
Abstract
Metal halide perovskites have emerged as promising candidates for solution-processed blue light-emitting diodes (LEDs). However, halide phase segregation – and the resultant spectral shift – at LED operating voltages hinders their application. Here we report true-blue LEDs employing quasi-two-dimensional cesium lead bromide with a narrow size distribution of quantum wells, achieved through the incorporation of a chelating additive. Ultrafast transient absorption spectroscopy measurements reveal that the chelating agent helps to control the quantum well thickness distribution. Density functional theory calculations show that the chelating molecule destabilizes the lead species on the quantum well surface and that this in turn suppresses the growth of thicker quantum wells. Treatment with γ-aminobutyric acid passivates electronic traps and enables films to withstand 100 °C for 24 h without changes to their emission spectrum. LEDs incorporating γ-aminobutyric acid-treated perovskites exhibit blue emission with Commission Internationale de l'Éclairage coordinates of (0.12, 0.14) at an external quantum efficiency of 6.3%.
Metal halide perovskites have been studied as promising materials for blue light-emitting diodes (LEDs) but the stability is still a bottleneck. Here Wang et al. develop a chelating additive strategy to increase efficiency, operational stability and color stability of blue perovskite LEDs.
You have requested "on-the-fly" machine translation of selected content from our databases. This functionality is provided solely for your convenience and is in no way intended to replace human translation. Show full disclaimer
Neither ProQuest nor its licensors make any representations or warranties with respect to the translations. The translations are automatically generated "AS IS" and "AS AVAILABLE" and are not retained in our systems. PROQUEST AND ITS LICENSORS SPECIFICALLY DISCLAIM ANY AND ALL EXPRESS OR IMPLIED WARRANTIES, INCLUDING WITHOUT LIMITATION, ANY WARRANTIES FOR AVAILABILITY, ACCURACY, TIMELINESS, COMPLETENESS, NON-INFRINGMENT, MERCHANTABILITY OR FITNESS FOR A PARTICULAR PURPOSE. Your use of the translations is subject to all use restrictions contained in your Electronic Products License Agreement and by using the translation functionality you agree to forgo any and all claims against ProQuest or its licensors for your use of the translation functionality and any output derived there from. Hide full disclaimer
Details











1 University of Toronto, Department of Electrical and Computer Engineering, Toronto, Canada (GRID:grid.17063.33) (ISNI:0000 0001 2157 2938); Soochow University, Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Suzhou, PR China (GRID:grid.263761.7) (ISNI:0000 0001 0198 0694)
2 University of Toronto, Department of Electrical and Computer Engineering, Toronto, Canada (GRID:grid.17063.33) (ISNI:0000 0001 2157 2938)
3 University of Toronto, Department of Electrical and Computer Engineering, Toronto, Canada (GRID:grid.17063.33) (ISNI:0000 0001 2157 2938); University of Toronto, Department of Materials Science and Engineering, Toronto, Canada (GRID:grid.17063.33) (ISNI:0000 0001 2157 2938)
4 University of Toronto Scarborough, Department of Physical and Environmental Sciences, Scarborough, Canada (GRID:grid.17063.33) (ISNI:0000 0001 2157 2938)
5 University of Toronto, Department of Materials Science and Engineering, Toronto, Canada (GRID:grid.17063.33) (ISNI:0000 0001 2157 2938)
6 Soochow University, Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Suzhou, PR China (GRID:grid.263761.7) (ISNI:0000 0001 0198 0694)