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Abstract
Brain-inspired parallel computing, which is typically performed using a hardware neural-network platform consisting of numerous artificial synapses, is a promising technology for effectively handling large amounts of informational data. However, the reported nonlinear and asymmetric conductance-update characteristics of artificial synapses prevent a hardware neural-network from delivering the same high-level training and inference accuracies as those delivered by a software neural-network. Here, we developed an artificial van-der-Waals hybrid synapse that features linear and symmetric conductance-update characteristics. Tungsten diselenide and molybdenum disulfide channels were used selectively to potentiate and depress conductance. Subsequently, via training and inference simulation, we demonstrated the feasibility of our hybrid synapse toward a hardware neural-network and also delivered high recognition rates that were comparable to those delivered using a software neural-network. This simulation involving the use of acoustic patterns was performed with a neural network that was theoretically formed with the characteristics of the hybrid synapses.
Designing high-performance and energy efficient neural network hardware remains a challenge. Here, the authors develop a van der Waals hybrid synaptic device that features linear and symmetric conductance-update characteristics and demonstrate the feasibility for hardware neural network performing acoustic pattern recognition.
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1 Sungkyunkwan University, Department of Electrical and Computer Engineering, Suwon, Korea (GRID:grid.264381.a) (ISNI:0000 0001 2181 989X)
2 Sungkyunkwan University, Department of Electrical and Computer Engineering, Suwon, Korea (GRID:grid.264381.a) (ISNI:0000 0001 2181 989X); Samsung Electronics Co. Ltd, Semiconductor R&D Center, Hwasung, Korea (GRID:grid.419666.a) (ISNI:0000 0001 1945 5898)
3 Sungkyunkwan University, Department of Electrical and Computer Engineering, Suwon, Korea (GRID:grid.264381.a) (ISNI:0000 0001 2181 989X); Samsung Electronics Co. Ltd., Foundry Division, Youngin, Korea (GRID:grid.419666.a) (ISNI:0000 0001 1945 5898)
4 Massachusetts Institute of Technology (MIT), Department of Mechanical Engineering, Cambridge, USA (GRID:grid.116068.8) (ISNI:0000 0001 2341 2786)
5 Hanyang University, Division of Electrical Engineering, Ansan, Korea (GRID:grid.49606.3d) (ISNI:0000 0001 1364 9317)
6 Sungkyunkwan University, Department of Electrical and Computer Engineering, Suwon, Korea (GRID:grid.264381.a) (ISNI:0000 0001 2181 989X); Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, Korea (GRID:grid.264381.a) (ISNI:0000 0001 2181 989X)