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Abstract
Perovskite light-emitting diodes (PeLEDs) have showed significant progress in recent years; the external quantum efficiency (EQE) of electroluminescence in green and red regions has exceeded 20%, but the efficiency in blue lags far behind. Here, a large cation CH3CH2NH2+ is added in PEA2(CsPbBr3)2PbBr4 perovskite to decrease the Pb–Br orbit coupling and increase the bandgap for blue emission. X-ray diffraction and nuclear magnetic resonance results confirmed that the EA has successfully replaced Cs+ cations to form PEA2(Cs1-xEAxPbBr3)2PbBr4. This method modulates the photoluminescence from the green region (508 nm) into blue (466 nm), and over 70% photoluminescence quantum yield in blue is obtained. In addition, the emission spectra is stable under light and thermal stress. With configuration of PeLEDs with 60% EABr, as high as 12.1% EQE of sky-blue electroluminescence located at 488 nm has been demonstrated, which will pave the way for the full color display for the PeLEDs.
Blue light-emitting diodes (LEDs) are critical for displays. Employing a large organic cation into a quasi-two dimensional perovskite with green emission, Chu et al. achieve LEDs exhibiting a high external quantum efficiency of 12.1% and stable spectra in the sky-blue region.
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1 Chinese Academy of Sciences, Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Beijing, P. R. China (GRID:grid.9227.e) (ISNI:0000000119573309); University of Chinese Academy of Sciences, Center of Materials Science and Optoelectronics Engineering, Beijing, P. R. China (GRID:grid.410726.6) (ISNI:0000 0004 1797 8419)
2 Chinese Academy of Sciences, State Key Lab Superlattices & Microstruct, Beijing 100083, Institute of Semiconductors, Beijing, P. R. China (GRID:grid.9227.e) (ISNI:0000000119573309)
3 University of Chinese Academy of Sciences, Center of Materials Science and Optoelectronics Engineering, Beijing, P. R. China (GRID:grid.410726.6) (ISNI:0000 0004 1797 8419); Chinese Academy of Sciences, State Key Lab Superlattices & Microstruct, Beijing 100083, Institute of Semiconductors, Beijing, P. R. China (GRID:grid.9227.e) (ISNI:0000000119573309)