Abstract

The Au/Pd/Ti–SiO2-(n) GaAs properties have been analyzed via impedance spectroscopy (IS), as well as DLTS and ICTS, to identify the origin of electron processes responsible for existence of constant phase elements (CPE) in an equivalent circuits of that structure. We showed that CPEs connected in series with resistance represents the electron processes associated with deep levels in GaAs and/or interface states at SiO2-(n) GaAs interface, depending on the value of n of CPE parameter. CPE with n close to 1 characterize the electron processes associated with EL2 deep level, and CPE with n = 0.5–0.65 the complex electron processes associated with EL3 deep level and interface states together. We stated that constant phase elements in equivalent circuits of MIS-GaAs structures with large frequency dispersion of electrical characteristics can be the result of more than one electron process.

Details

Title
The origin of constant phase element in equivalent circuit of MIS (n) GaAs structures
Author
Drewniak Łukasz 1   VIAFID ORCID Logo  ; Kochowski Stanisław 1 

1  Silesian University of Technology, Institute of Physics – Centre for Science and Education, Gliwice, Poland (GRID:grid.6979.1) (ISNI:0000 0001 2335 3149) 
Pages
19106-19118
Publication year
2020
Publication date
Nov 2020
Publisher
Springer Nature B.V.
ISSN
09574522
e-ISSN
1573482X
Source type
Scholarly Journal
Language of publication
English
DOI
https://doi.org/10.1007/s10854-020-04447-8
ProQuest document ID
2473369889
Copyright
© The Author(s) 2020. This work is published under http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.