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Abstract
Two-dimensional materials with high charge carrier mobility and tunable band gaps have attracted intense research effort for their potential use in nanoelectronics. Two-dimensional π-conjugated polymers constitute a promising subclass because the band structure can be manipulated by varying the molecular building blocks while preserving key features such as Dirac cones and high charge mobility. The major barriers to the application of two-dimensional π-conjugated polymers have been the small domain size and high defect density attained in the syntheses explored so far. Here, we demonstrate the fabrication of mesoscale ordered two-dimensional π-conjugated polymer kagome lattices with semiconducting properties, Dirac cone structures and flat bands on Au(111). This material has been obtained by combining a rigid azatriangulene precursor and a hot dosing approach, which favours molecular diffusion and eliminates voids in the network. These results open opportunities for the synthesis of two-dimensional π-conjugated polymer Dirac cone materials and their integration into devices.
Optimized Ullmann coupling reaction of heterotriangulene precursors allows the synthesis of two-dimensional π-conjugated polymers with ordered domains larger than 100 × 100 nm2 showing both Dirac cones and flat bands in their electronic structure.
Details
; De, Marchi F 2
; Hamzehpoor, E 3
; MacLean, O 2
; Rajeswara, Rao M 3 ; Chen, Y 3 ; Besteiro, L V 4
; Dettmann, D 5
; Ferrari, L 6 ; Frezza, F 7
; Sheverdyaeva, P M 8
; Liu, R 9 ; Kundu, A K 8
; Moras, P 8
; Ebrahimi, M 10
; Gallagher, M C 9
; Rosei, F 2
; Perepichka, D F 3
; Contini, G 7
1 Institut National de la Recherche Scientifique, Centre Energie, Matériaux et Télécommunications, Varennes, Canada (GRID:grid.418084.1) (ISNI:0000 0000 9582 2314); CNR, Istituto di Struttura della Materia, Roma, Italy (GRID:grid.5326.2) (ISNI:0000 0001 1940 4177); Deutsches Museum, München, Germany (GRID:grid.424220.2) (ISNI:0000000404924948)
2 Institut National de la Recherche Scientifique, Centre Energie, Matériaux et Télécommunications, Varennes, Canada (GRID:grid.418084.1) (ISNI:0000 0000 9582 2314)
3 McGill University, Department of Chemistry, Montreal, Canada (GRID:grid.14709.3b) (ISNI:0000 0004 1936 8649)
4 Institut National de la Recherche Scientifique, Centre Energie, Matériaux et Télécommunications, Varennes, Canada (GRID:grid.418084.1) (ISNI:0000 0000 9582 2314); University of Electronic Science and Technology of China, Institute of Fundamental and Frontier Sciences, Chengdu, China (GRID:grid.54549.39) (ISNI:0000 0004 0369 4060)
5 Institut National de la Recherche Scientifique, Centre Energie, Matériaux et Télécommunications, Varennes, Canada (GRID:grid.418084.1) (ISNI:0000 0000 9582 2314); CNR, Istituto di Struttura della Materia, Roma, Italy (GRID:grid.5326.2) (ISNI:0000 0001 1940 4177)
6 CNR, Istituto di Struttura della Materia, Roma, Italy (GRID:grid.5326.2) (ISNI:0000 0001 1940 4177)
7 CNR, Istituto di Struttura della Materia, Roma, Italy (GRID:grid.5326.2) (ISNI:0000 0001 1940 4177); University of Tor Vergata, Department of Physics, Rome, Italy (GRID:grid.6530.0) (ISNI:0000 0001 2300 0941)
8 CNR, Istituto di Struttura della Materia, Trieste, Italy (GRID:grid.5326.2) (ISNI:0000 0001 1940 4177)
9 Lakehead University, Department of Physics, Thunder Bay, Canada (GRID:grid.258900.6) (ISNI:0000 0001 0687 7127)
10 Institut National de la Recherche Scientifique, Centre Energie, Matériaux et Télécommunications, Varennes, Canada (GRID:grid.418084.1) (ISNI:0000 0000 9582 2314); Lakehead University, Department of Chemistry, Thunder Bay, Canada (GRID:grid.258900.6) (ISNI:0000 0001 0687 7127)





