Content area

Abstract

To achieve excellent surface quality, this paper presented an experimental study on single-point diamond turning of a 55 vol% SiCp/Al composite below the ductile brittle transition depth of SiC. The dry and mist cutting results indicated that the surface roughness generated by dry turning is much higher than those generated by mist turning. Surface roughness decreased with the increasing rotation speed and increased with the increasing feed rate, while the influence of depth of cut was insignificant. The minimum surface roughness Sa could be achieved around 0.05 μm. Besides, the roughness rebounded obviously under much small feed rate (0.5 μm/z) or depth of cut (0.25 μm). Machined surface examined by SEM indicated that many SiC particles were cut in ductile mode, while there were still numerous defects, such as holes, pits, tearings, grooves, and voids. The chipping, cleavage, and abrasive wear were the dominating wear patterns of diamond tools. In the end, the main influential factors on the cutting process of SiC and approaches for enhancing the probability of ductile cutting SiC were discussed.

Details

Title
An experimental study on single-point diamond turning of a 55 vol% SiCp/Al composite below the ductile brittle transition depth of SiC
Author
Wang, Tao 1 ; Wu, Xiaoyu 2 ; Zhang, Guoqing 2 ; Dai Yuqi 2 ; Xu, Bin 2 ; Ruan Shuangchen 3 

 Shenzhen University, Guangdong Provincial Key Laboratory of Micro/Nano Optomechatronics Engineering, College of Mechatronics and Control Engineering, Shenzhen, China (GRID:grid.263488.3) (ISNI:0000 0001 0472 9649); Shenzhen University, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen, China (GRID:grid.263488.3) (ISNI:0000 0001 0472 9649) 
 Shenzhen University, Guangdong Provincial Key Laboratory of Micro/Nano Optomechatronics Engineering, College of Mechatronics and Control Engineering, Shenzhen, China (GRID:grid.263488.3) (ISNI:0000 0001 0472 9649) 
 Shenzhen University, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen, China (GRID:grid.263488.3) (ISNI:0000 0001 0472 9649) 
Pages
2255-2268
Publication year
2020
Publication date
Jun 2020
Publisher
Springer Nature B.V.
ISSN
02683768
e-ISSN
14333015
Source type
Scholarly Journal
Language of publication
English
ProQuest document ID
2490865979
Copyright
© Springer-Verlag London Ltd., part of Springer Nature 2020.