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Abstract
We in-situ observe the ultrafast dynamics of trapped carriers in organic methyl ammonium lead halide perovskite thin films by ultrafast photocurrent spectroscopy with a sub-25 picosecond time resolution. Upon ultrafast laser excitation, trapped carriers follow a phonon assisted tunneling mechanism and a hopping transport mechanism along ultra-shallow to shallow trap states ranging from 1.72–11.51 millielectronvolts and is demonstrated by time-dependent and independent activation energies. Using temperature as an energetic ruler, we map trap states with ultra-high energy resolution down to < 0.01 millielectronvolt. In addition to carrier mobility of ~4 cm2V−1s−1 and lifetime of ~1 nanosecond, we validate the above transport mechanisms by highlighting trap state dynamics, including trapping rates, de-trapping rates and trap properties, such as trap density, trap levels, and capture-cross sections. In this work we establish a foundation for trap dynamics in high defect-tolerant perovskites with ultra-fast temporal and ultra-high energetic resolution.
Defect states in perovskites dictate the charge carriers behaviour, thus the ultimate optical and electrical properties. Here, the authors in-situ investigate trapped carrier dynamics in MAPbI3 thin films with ultra-fast temporal and high energetic resolution by means of ultrafast photocurrent spectroscopy.
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1 Clemson University, Department of Physics and Astronomy, Ultrafast Photophysics of Quantum Devices Laboratory, Clemson, USA (GRID:grid.26090.3d) (ISNI:0000 0001 0665 0280)
2 Los Alamos National Laboratory, Center for Integrated Nanotechnology, Los Alamos, USA (GRID:grid.148313.c) (ISNI:0000 0004 0428 3079)
3 Huazhong University of Science and Technology, School of Optical and Electronic Information, Wuhan, People’s Republic of China (GRID:grid.33199.31) (ISNI:0000 0004 0368 7223)
4 Jilin University, Institute of Atomic and Molecular Physics, Jilin Provincial Key Laboratory of Applied Atomic and Molecular Spectroscopy, Changchun, People’s Republic of China (GRID:grid.64924.3d) (ISNI:0000 0004 1760 5735)
5 Hong Kong Baptist University, Department of Physics, Kowloon Tong Hong Kong, People’s Republic of China (GRID:grid.221309.b) (ISNI:0000 0004 1764 5980)
6 Department of Materials Science and Engineering, Technion, Haifa, Israel (GRID:grid.6451.6) (ISNI:0000000121102151)
7 The University of Alabama, Department of Metallurgical and Materials Engineering, Tuscaloosa, USA (GRID:grid.411015.0) (ISNI:0000 0001 0727 7545)
8 National Renewable Energy Laboratory, Golden, USA (GRID:grid.419357.d) (ISNI:0000 0001 2199 3636)