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Abstract
The search for new two-dimensional monolayers with diverse electronic properties has attracted growing interest in recent years. Here, we present an approach to construct MA2Z4 monolayers with a septuple-atomic-layer structure, that is, intercalating a MoS2-type monolayer MZ2 into an InSe-type monolayer A2Z2. We illustrate this unique strategy by means of first-principles calculations, which not only reproduce the structures of MoSi2N4 and MnBi2Te4 that were already experimentally synthesized, but also predict 72 compounds that are thermodynamically and dynamically stable. Such an intercalated architecture significantly reconstructs the band structures of the constituents MZ2 and A2Z2, leading to diverse electronic properties for MA2Z4, which can be classified according to the total number of valence electrons. The systems with 32 and 34 valence electrons are mostly semiconductors. Whereas, those with 33 valence electrons can be nonmagnetic metals or ferromagnetic semiconductors. In particular, we find that, among the predicted compounds, (Ca,Sr)Ga2Te4 are topologically nontrivial by both the standard density functional theory and hybrid functional calculations. While VSi2P4 is a ferromagnetic semiconductor and TaSi2N4 is a type-I Ising superconductor. Moreover, WSi2P4 is a direct gap semiconductor with peculiar spin-valley properties, which are robust against interlayer interactions. Our study thus provides an effective way of designing septuple-atomic-layer MA2Z4 with unusual electronic properties to draw immediate experimental interest.
The discovery of a new two-dimensional van der Waals layered MoSi2N4 material inspires many attentions. Here, the authors report intercalation strategies to explore a much wider range of MA2Z4 family and predict amount of materials accessible to experimental verifications with emergent topological, magnetic or Ising superconductivity properties.
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1 Institute of Metal Research, Chinese Academy of Sciences, Shenyang National Laboratory for Materials Science, Shenyang, People’s Republic of China (GRID:grid.458487.2) (ISNI:0000 0004 1803 9309); University of Science and Technology of China, School of Materials Science and Engineering, Shenyang, People’s Republic of China (GRID:grid.59053.3a) (ISNI:0000000121679639)
2 Hunan Normal University, School of Physics and Electronics, Key Laboratory for Matter Microstructure and Function of Hunan Province, Changsha, People’s Republic of China (GRID:grid.411427.5) (ISNI:0000 0001 0089 3695); Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Changsha, People’s Republic of China (GRID:grid.411427.5)
3 Institute of Metal Research, Chinese Academy of Sciences, Shenyang National Laboratory for Materials Science, Shenyang, People’s Republic of China (GRID:grid.458487.2) (ISNI:0000 0004 1803 9309)
4 Institute of Metal Research, Chinese Academy of Sciences, Shenyang National Laboratory for Materials Science, Shenyang, People’s Republic of China (GRID:grid.458487.2) (ISNI:0000 0004 1803 9309); University of Science and Technology of China, School of Materials Science and Engineering, Shenyang, People’s Republic of China (GRID:grid.59053.3a) (ISNI:0000000121679639); Tsinghua University, Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute (TBSI), Shenzhen, People’s Republic of China (GRID:grid.12527.33) (ISNI:0000 0001 0662 3178)