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Abstract
Highlights
The structure–property relationship of PdSe2 is discussed, i.e., layer number vs. tunable bandgap, pentagonal structure vs. anisotropy-based polarized light detection.
The synthesis approaches of PdSe2 are thoroughly compared, including bottom-up methods such as chemical vapor transport for bulk crystals, chemical vapor deposition for thin films and single-crystal domains, selenization of Pd films. Besides, top-down strategies are discussed, covering the mechanical exfoliation of bulk crystals, plasma thinning, and vacuum annealing as well as phase transition.
The emerging devices of PdSe2 and its van der Waals heterostructures have been delivered such as metal/semiconductor contact, Schottky junction transistors, field-effect transistors, photodetectors, p–n junction-based rectifiers, polarized light detector, and infrared image sensors.
Future opportunities of PdSe2-based van der Waals heterostructures are given including logic gate-based digital circuits, RF-integrated circuits, Internet of Things, and theoretical calculation as well as big data for materials science.
The rapid development of two-dimensional (2D) transition-metal dichalcogenides has been possible owing to their special structures and remarkable properties. In particular, palladium diselenide (PdSe2) with a novel pentagonal structure and unique physical characteristics have recently attracted extensive research interest. Consequently, tremendous research progress has been achieved regarding the physics, chemistry, and electronics of PdSe2. Accordingly, in this review, we recapitulate and summarize the most recent research on PdSe2, including its structure, properties, synthesis, and applications. First, a mechanical exfoliation method to obtain PdSe2 nanosheets is introduced, and large-area synthesis strategies are explained with respect to chemical vapor deposition and metal selenization. Next, the electronic and optoelectronic properties of PdSe2 and related heterostructures, such as field-effect transistors, photodetectors, sensors, and thermoelectric devices, are discussed. Subsequently, the integration of systems into infrared image sensors on the basis of PdSe2 van der Waals heterostructures is explored. Finally, future opportunities are highlighted to serve as a general guide for physicists, chemists, materials scientists, and engineers. Therefore, this comprehensive review may shed light on the research conducted by the 2D material community.
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Details
1 Shandong University, Institute of Marine Science and Technology, Qingdao, People’s Republic of China (GRID:grid.27255.37) (ISNI:0000 0004 1761 1174)
2 University of Jinan, Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), Shandong, People’s Republic of China (GRID:grid.454761.5)
3 Technische Universität Dresden, Institute for Materials Science and Max Bergmann Center of Biomaterials, Dresden, Germany (GRID:grid.4488.0) (ISNI:0000 0001 2111 7257); Technische Universität Dresden, Center for Advancing Electronics Dresden, Dresden, Germany (GRID:grid.4488.0) (ISNI:0000 0001 2111 7257); Technische Universität Dresden, Dresden Center for Computational Materials Science, Dresden, Germany (GRID:grid.4488.0) (ISNI:0000 0001 2111 7257); Technische Universität Dresden, Dresden Center for Intelligent Materials (GCL DCIM), Dresden, Germany (GRID:grid.4488.0) (ISNI:0000 0001 2111 7257)
4 GRINM Group Co. Ltd., State Key Laboratory of Advanced Materials for Smart Sensing, Beijing, People’s Republic of China (GRID:grid.459522.d) (ISNI:0000 0000 9491 9421)
5 Southern University of Science and Technology, Department of Chemistry, Guangdong Provincial Key Laboratory of Catalytic Chemistry, Shenzhen, People’s Republic of China (GRID:grid.263817.9)
6 University of Jinan, Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), Shandong, People’s Republic of China (GRID:grid.454761.5); Shandong University, State Key Laboratory of Crystal Materials, Center of Bio and Micro/Nano Functional Materials, Jinan, People’s Republic of China (GRID:grid.27255.37) (ISNI:0000 0004 1761 1174)
7 Chinese Academy of Sciences, Shenzhen Institutes of Shenzhen Institutes of Advanced Technology, Shenzhen, People’s Republic of China (GRID:grid.9227.e) (ISNI:0000000119573309)
8 Soochow University, College of Energy Soochow Institute for Energy and Materials Innovations, Suzhou, People’s Republic of China (GRID:grid.263761.7) (ISNI:0000 0001 0198 0694); Soochow University, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Suzhou, People’s Republic of China (GRID:grid.263761.7) (ISNI:0000 0001 0198 0694); Polish Academy of Sciences, Centre of Polymer and Carbon Materials, Zabrze, Poland (GRID:grid.413454.3) (ISNI:0000 0001 1958 0162); Institute for Complex Materials, Dresden, Germany (GRID:grid.413454.3); Institute of Environmental Technology VŠB-Technical University of Ostrava, Ostrava, Czech Republic (GRID:grid.440850.d) (ISNI:0000 0000 9643 2828)