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In this works, CdTe was deposited on glass and Si substrates using thermal evaporation techniques. CdTe has been investigated from the properties (structural, surface morphological, optical and electrical). XRD analyses found the monocrystallite, cubic structure of the CdTe thin film and there is no trace of the other material. UV-Vis measurements indicate that 1.51 eV was found the energy gap of the CdTe thin film. Ag/CdTe/Si/Ag The heterojunction Photodetector has two response peaks located at 450 nm and 900 nm with a maximum sensitivity and detectivity of Ag/CdTe/Si/Ag 0.22 A/W and 3.1×1012 respectively.
Details
Subject
Identifier / keyword
Title
CdTe Thin Films prepared by thermal evaporation on Silicon substrate for photocurrent device Applications
Author
Ali Hameed Rasheed 1 ; Lamyaa Mohammed Raoof 2 ; abd, Ahmed N 2
1 Medical Technical Insitute, Mansour, Middle Technical University, Baghdad, Iraq
2 Physics Department, Science Faculty, Mustansiriya University. Baghdad, Iraq
1 Medical Technical Insitute, Mansour, Middle Technical University, Baghdad, Iraq
2 Physics Department, Science Faculty, Mustansiriya University. Baghdad, Iraq
Volume
1963
Issue
1
Publication year
2021
Publication date
Jul 2021
Place of publication
Bristol
Country of publication
United Kingdom
Publication subject
ISSN
17426588
e-ISSN
17426596
Source type
Scholarly Journal
Language of publication
English
Document type
Journal Article
Publication history
Online publication date
2021-07-26
Milestone dates
2021-07-01 (openaccess)
Publication history
First posting date
26 Jul 2021
ProQuest document ID
2555407085
Document URL
https://www.proquest.com/scholarly-journals/cdte-thin-films-prepared-thermal-evaporation-on/docview/2555407085/se-2?accountid=208611
Copyright
© 2021. This work is published under http://creativecommons.org/licenses/by/3.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.
Last updated
2023-11-28
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