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Abstract
Structures based on AlInGaN solid solutions were studied. The types of defects in them and the corresponding emission bands of photoluminescence (PL) spectra were identified. It is possible to determine the concentration of defects in the structure from the ratio of the intensities of the emission line, corresponding to the width of the forbidden zone in GaN, and the emission lines associated with defects.
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1 Saint Petersburg Electrotechnical University (ETU), 5 Prof. Popov str., Saint Petersburg 197376, Russia