Abstract

We report on a systematic scanning tunneling microscopy and spectroscopy (STM/STS) study on 1T–TaS2-x Se x (x = 0, 0.3, 1.0) at 4.2 K. While the compounds with x = 0 and 0.3, which undergoes the Mott transition, showed the commensurate charge density wave (CDW) with the period of \(\sqrt{13}{a}_{0}\times \sqrt{13}{a}_{0}\) (a 0 is in-plane lattice constant), the compound with x=1, which shows superconductivity at 3.5 K, exhibits anomalous domain structure: The domain structure consists of regions with regular array of David-stars divided by bright contrasted walls at positive bias voltage. We found the domain wall showed the different electronic state from that of the domain.

Details

Title
Electronic states of domain structure in 1T-TaS2-x Se x observed by STM/STS
Author
Fujii, D 1 ; Iwasaki, T 1 ; Akiyama, K 1 ; Fujisawa, Y 1 ; Demura, S 1 ; Sakata, H 1 

 Department of Physics, Tokyo University of Science, Shinjuku-ku, Tokyo 162-8601, Japan 
Publication year
2018
Publication date
Mar 2018
Publisher
IOP Publishing
ISSN
17426588
e-ISSN
17426596
Source type
Scholarly Journal
Language of publication
English
ProQuest document ID
2572055982
Copyright
© 2018. This work is published under http://creativecommons.org/licenses/by/3.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.