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Abstract
The numerical impact modeling of some external effects on the CVC of biosensors based on AlGaN/GaN heterostructures (HEMT) was carried out. The mathematical model was created that allowed to predict the behavior of the drain current depending on condition changes on the heterostructure surface in the gate region and to start the process of directed construction optimization of the biosensors based on AlGaN/GaN HEMT with the aim of improving their performance. The calculation of the drain current of the biosensor construction was carried out to confirm the reliability of the developed mathematical model and obtained results.
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Details
1 Saint-Petersburg State Electrotechnical University “LETT”, St. Petersburg 197376, Russia; Closed Joint Stock Company “Svetlana-Electronpribor”, St. Petersburg 194156, Russia
2 Bauman Moscow State Technical University, Moscow 105005, Russia
3 Closed Joint Stock Company “Svetlana-Electronpribor”, St. Petersburg 194156, Russia