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Abstract
We report original method of formation Ga(In)N/AlN quantum dots with low density by ammonia MBE on the (0001)AlN surface by using a decomposition process of Ga(In)N thin layer. Low density of quantum dots have been obtained in the range 107-109 cm-2. Single quantum dots photoluminescence lines corresponding to exciton and biexciton transitions were observed in micro-photoluminescence spectra.
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Details
1 Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Siences, Novosibirsk 630090, Russia
2 Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan