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Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiNx and AlGaN layers
Haeberlen, M; Zhu, D; McAleese, C; Kappers, M J; Humphreys, C J.
Journal of Physics: Conference Series; Bristol Vol. 209, Iss. 1, (Feb 2010).
DOI:10.1088/1742-6596/209/1/012017
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