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Abstract
Triggered by the pioneering research on graphene, the family of two-dimensional layered materials (2DLMs) has been investigated for more than a decade, and appealing functionalities have been demonstrated. However, there are still challenges inhibiting high-quality growth and circuit-level integration, and results from previous studies are still far from complying with industrial standards. Here, we overcome these challenges by utilizing machine-learning (ML) algorithms to evaluate key process parameters that impact the electrical characteristics of MoS2 top-gated field-effect transistors (FETs). The wafer-scale fabrication processes are then guided by ML combined with grid searching to co-optimize device performance, including mobility, threshold voltage and subthreshold swing. A 62-level SPICE modeling was implemented for MoS2 FETs and further used to construct functional digital, analog, and photodetection circuits. Finally, we present wafer-scale test FET arrays and a 4-bit full adder employing industry-standard design flows and processes. Taken together, these results experimentally validate the application potential of ML-assisted fabrication optimization for beyond-silicon electronic materials.
Here, the authors demonstrate the application of machine learning to optimize the device fabrication process for wafer-scale 2D semiconductors, and eventually fabricate digital, analog, and optoelectrical circuits.
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1 Fudan University, State Key Laboratory of ASIC and System, School of Microelectronics, Shanghai, P. R. China (GRID:grid.8547.e) (ISNI:0000 0001 0125 2443)
2 Fudan University, State Key Laboratory of ASIC and System, School of Information Science and Technology, Shanghai, P. R. China (GRID:grid.8547.e) (ISNI:0000 0001 0125 2443)
3 Shenzhen Six Carbon Technology, Shenzhen, P. R. China (GRID:grid.8547.e)
4 Soochow University, School of Electronic and Information Engineering, Suzhou, P. R. China (GRID:grid.263761.7) (ISNI:0000 0001 0198 0694)
5 Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, State Key Laboratory of Functional Materials for Informatics, Shanghai, P. R. China (GRID:grid.458459.1) (ISNI:0000 0004 1792 5798)
6 National University of Singapore, Department of Electrical and Computer Engineering, Singapore, Singapore (GRID:grid.4280.e) (ISNI:0000 0001 2180 6431)