Abstract

With the increasing demand for multispectral information acquisition, infrared multispectral imaging technology that is inexpensive and can be miniaturized and integrated into other devices has received extensive attention. However, the widespread usage of such photodetectors is still limited by the high cost of epitaxial semiconductors and complex cryogenic cooling systems. Here, we demonstrate a noncooled two-color infrared photodetector that can provide temporal-spatial coexisting spectral blackbody detection at both near-infrared and mid-infrared wavelengths. This photodetector consists of vertically stacked back-to-back diode structures. The two-color signals can be effectively separated to achieve ultralow crosstalk of ~0.05% by controlling the built-in electric field depending on the intermediate layer, which acts as an electron-collecting layer and hole-blocking barrier. The impressive performance of the two-color photodetector is verified by the specific detectivity (D*) of 6.4 × 109 cm Hz1/2 W−1 at 3.5 μm and room temperature, as well as the promising NIR/MWIR two-color infrared imaging and absolute temperature detection.

Details

Title
Van der Waals two-color infrared photodetector
Author
Wu, Peisong 1 ; Ye Lei 2   VIAFID ORCID Logo  ; Tong, Lei 2 ; Wang, Peng 3 ; Wang, Yang 4 ; Wang, Hailu 1 ; Ge Haonan 1 ; Wang, Zhen 1 ; Gu Yue 1 ; Zhang, Kun 3 ; Yu Yiye 5 ; Meng, Peng 5 ; Wang, Fang 3 ; Huang, Min 3 ; Zhou, Peng 6 ; Hu Weida 1   VIAFID ORCID Logo 

1  Chinese Academy of Sciences, State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Shanghai, China (GRID:grid.9227.e) (ISNI:0000000119573309); University of Chinese Academy of Sciences, Beijing, China (GRID:grid.410726.6) (ISNI:0000 0004 1797 8419) 
2  Huazhong University of Science and Technology, Hubei Yangtze Memory Labs, School of Optical and Electronic Information and Wuhan National Laboratory for Optoelectronics, Wuhan, China (GRID:grid.33199.31) (ISNI:0000 0004 0368 7223) 
3  Chinese Academy of Sciences, State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Shanghai, China (GRID:grid.9227.e) (ISNI:0000000119573309) 
4  Chinese Academy of Sciences, State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Shanghai, China (GRID:grid.9227.e) (ISNI:0000000119573309); Fudan University, State Key Laboratory of ASIC and Systems, School of Microelectronics, Shanghai, China (GRID:grid.8547.e) (ISNI:0000 0001 0125 2443) 
5  Chinese Academy of Sciences, State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Shanghai, China (GRID:grid.9227.e) (ISNI:0000000119573309); Huazhong University of Science and Technology, Hubei Yangtze Memory Labs, School of Optical and Electronic Information and Wuhan National Laboratory for Optoelectronics, Wuhan, China (GRID:grid.33199.31) (ISNI:0000 0004 0368 7223) 
6  Fudan University, State Key Laboratory of ASIC and Systems, School of Microelectronics, Shanghai, China (GRID:grid.8547.e) (ISNI:0000 0001 0125 2443) 
Publication year
2022
Publication date
2022
Publisher
Springer Nature B.V.
e-ISSN
20477538
Source type
Scholarly Journal
Language of publication
English
DOI
https://doi.org/10.1038/s41377-021-00694-4
ProQuest document ID
2615681785
Copyright
© The Author(s) 2022. This work is published under http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.