It appears you don't have support to open PDFs in this web browser. To view this file, Open with your PDF reader
Abstract
Erbium doped integrated waveguide amplifier and laser prevail in power consumption, footprint, stability and scalability over the counterparts in bulk materials, underpinning the lightwave communication and large-scale sensing. Subject to the highly confined mode in the micro-to-nanoscale and moderate propagation loss, gain and power scaling in such integrated devices prove to be more challenging compared to their bulk counterparts. In this work, a thin cladding layer of tantalum pentoxide (Ta2O5) is employed in the erbium doped lithium niobate (LN) waveguide amplifier fabricated on the thin film lithium niobate on insulator (LNOI) wafer by the photolithography assisted chemo-mechanical etching (PLACE) technique. Above 20 dB small signal internal net gain is achieved at the signal wavelength around 1532 nm in the 10 cm long LNOI amplifier pumped by the diode laser at ∼980 nm. Experimental characterizations reveal the advantage of Ta2O5 cladding in higher optical gain compared with the air-clad amplifier, which is further explained by the theoretical modeling of the LNOI amplifier including the guided mode structures and the steady-state response of erbium ions.
You have requested "on-the-fly" machine translation of selected content from our databases. This functionality is provided solely for your convenience and is in no way intended to replace human translation. Show full disclaimer
Neither ProQuest nor its licensors make any representations or warranties with respect to the translations. The translations are automatically generated "AS IS" and "AS AVAILABLE" and are not retained in our systems. PROQUEST AND ITS LICENSORS SPECIFICALLY DISCLAIM ANY AND ALL EXPRESS OR IMPLIED WARRANTIES, INCLUDING WITHOUT LIMITATION, ANY WARRANTIES FOR AVAILABILITY, ACCURACY, TIMELINESS, COMPLETENESS, NON-INFRINGMENT, MERCHANTABILITY OR FITNESS FOR A PARTICULAR PURPOSE. Your use of the translations is subject to all use restrictions contained in your Electronic Products License Agreement and by using the translation functionality you agree to forgo any and all claims against ProQuest or its licensors for your use of the translation functionality and any output derived there from. Hide full disclaimer
Details
1 State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai 200062, China; The Extreme Optoelectromechanics Laboratory (XXL), School of Physics and Electronic Sciences, East China Normal University, Shanghai 200241, China
2 The Extreme Optoelectromechanics Laboratory (XXL), School of Physics and Electronic Sciences, East China Normal University, Shanghai 200241, China
3 State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-Intense Laser Science, Shanghai Institute of Optics and Fine Mechanics (SIOM), Chinese Academy of Sciences (CAS), Shanghai 201800, China
4 State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai 200062, China; The Extreme Optoelectromechanics Laboratory (XXL), School of Physics and Electronic Sciences, East China Normal University, Shanghai 200241, China; State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-Intense Laser Science, Shanghai Institute of Optics and Fine Mechanics (SIOM), Chinese Academy of Sciences (CAS), Shanghai 201800, China; Shanghai Research Center for Quantum Sciences, Shanghai 201315, China; Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China; Collaborative Innovation Center of Light Manipulations and Applications, Shandong Normal University, Jinan 250358, China