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Abstract
Recent theoretical predictions of ferroelectricity in two-dimensional (2D) van der Waals materials reveal exciting possibilities for their use in scalable low-power electronic devices with polarization-dependent functionalities. These prospects have been further invigorated by the experimental evidence of the polarization response in some transition metal chalcogenides (TMCs)—a group of narrow-band semiconductors and semimetals with a wealth of application potential. Among the TMCs, molybdenum disulfide (MoS2) is known as one of the most promising and robust 2D electronic materials. However, in spite of theoretical predictions, no ferroelectricity has been experimentally detected in MoS2, while the emergence of this property could enhance its potential for electronics applications. Here, we report the experimental observation of a stable room-temperature out-of-plane polarization ordering in 2D MoS2 layers, where polarization switching is realized by mechanical pressure induced by a tip of a scanning probe microscope. Using this approach, we create the bi-domain polarization states, which exhibit different piezoelectric activity, second harmonic generation, surface potential, and conductivity. Ferroelectric MoS2 belongs to the distorted trigonal structural 1T” phase, where a spontaneous polarization is inferred by its P3m1 space-group symmetry and corroborated by theoretical modeling. Experiments on the flipped flakes reveal that the 1T”-MoS2 samples consist of the monolayers with randomly alternating polarization orientation, which form stable but switchable “antipolar” head-to-head or tail-to-tail dipole configurations. Mechanically written domains are remarkably stable facilitating the application of 1T”-MoS2 in flexible memory and electromechanical devices.
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1 University of Nebraska, Department of Chemistry, Lincoln, USA (GRID:grid.24434.35) (ISNI:0000 0004 1937 0060)
2 University of Nebraska, Department of Physics and Astronomy, Lincoln, USA (GRID:grid.24434.35) (ISNI:0000 0004 1937 0060)
3 East China Normal University, Key Laboratory of Polar Materials and Devices and Department of Electronics, Shanghai, China (GRID:grid.22069.3f) (ISNI:0000 0004 0369 6365)
4 Institut de Physique et Chimie des Matériaux de Strasbourg, UMR 7504, Université de Strasbourg, CNRS, Strasbourg, France (GRID:grid.461894.6) (ISNI:0000 0000 9663 2512)
5 Asylum Research, an Oxford Instruments Company, Santa Barbara, USA (GRID:grid.456203.6)
6 University of Luxembourg, Department of Physics and Materials Science, Belvaux, Luxembourg (GRID:grid.16008.3f) (ISNI:0000 0001 2295 9843); Luxembourg Institute of Science and Technology, Department of Materials Research and Technology, Esch/Alzette, Luxembourg (GRID:grid.423669.c)