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Abstract
In the quest for emerging in-sensor computing, materials that respond to optical stimuli in conjunction with non-volatile phase transition are highly desired for realizing bioinspired neuromorphic vision components. Here, we report a non-volatile multi-level control of VO2 films by oxygen stoichiometry engineering under ultraviolet irradiation. Based on the reversible regulation of VO2 films using ultraviolet irradiation and electrolyte gating, we demonstrate a proof-of-principle neuromorphic ultraviolet sensor with integrated sensing, memory, and processing functions at room temperature, and also prove its silicon compatible potential through the wafer-scale integration of a neuromorphic sensor array. The device displays linear weight update with optical writing because its metallic phase proportion increases almost linearly with the light dosage. Moreover, the artificial neural network consisting of this neuromorphic sensor can extract ultraviolet information from the surrounding environment, and significantly improve the recognition accuracy from 24% to 93%. This work provides a path to design neuromorphic sensors and will facilitate the potential applications in artificial vision systems.
Bioinspired neuromorphic vision components are highly desired for the emerging in-sensor computing technology. Here, Ge et al. develop an array of optoelectronic synapses capable of memorizing and processing ultraviolet images facilitated by photo-induced non-volatile phase transition in VO2 films.
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1 Institute of Physics, Chinese Academy of Sciences, Beijing National Laboratory for Condensed Matter Physics, Beijing, China (GRID:grid.458438.6) (ISNI:0000 0004 0605 6806); University of Chinese Academy of Sciences, Beijing, China (GRID:grid.410726.6) (ISNI:0000 0004 1797 8419)
2 Institute of Physics, Chinese Academy of Sciences, Beijing National Laboratory for Condensed Matter Physics, Beijing, China (GRID:grid.458438.6) (ISNI:0000 0004 0605 6806); China University of Petroleum (East China), College of Science, Qingdao, China (GRID:grid.497420.c) (ISNI:0000 0004 1798 1132)
3 Institute of Physics, Chinese Academy of Sciences, Beijing National Laboratory for Condensed Matter Physics, Beijing, China (GRID:grid.458438.6) (ISNI:0000 0004 0605 6806)
4 Institute of Physics, Chinese Academy of Sciences, Beijing National Laboratory for Condensed Matter Physics, Beijing, China (GRID:grid.458438.6) (ISNI:0000 0004 0605 6806); Capital Normal University, Key Laboratory of Terahertz Optoelectronics, Ministry of Education, and Beijing Advanced Innovation Center for Imaging Theory and Technology, Department of Physics, Beijing, China (GRID:grid.253663.7) (ISNI:0000 0004 0368 505X)
5 Capital Normal University, Key Laboratory of Terahertz Optoelectronics, Ministry of Education, and Beijing Advanced Innovation Center for Imaging Theory and Technology, Department of Physics, Beijing, China (GRID:grid.253663.7) (ISNI:0000 0004 0368 505X)
6 University-Industry Joint Center for Ocean Observation and Broadband Communication, State Key Laboratory of Bio-Fibers and Eco-Textiles Qingdao University, College of Physics, Qingdao, China (GRID:grid.410645.2) (ISNI:0000 0001 0455 0905)
7 China University of Petroleum (East China), College of Science, Qingdao, China (GRID:grid.497420.c) (ISNI:0000 0004 1798 1132)
8 Institute of High Energy Physics, Chinese Academy of Sciences, Beijing Synchrotron Radiation Facility, Beijing, China (GRID:grid.418741.f) (ISNI:0000 0004 0632 3097)