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© 2022 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.

Abstract

In recent years, rare-earth metals with triply oxidized state, lanthanide ions (Ln3+), have been demonstrated as dopants, which can efficiently improve the optical and electronic properties of metal halide perovskite materials. On the one hand, doping Ln3+ ions can convert near-infrared/ultraviolet light into visible light through the process of up-/down-conversion and then the absorption efficiency of solar spectrum by perovskite solar cells can be significantly increased, leading to high device power conversion efficiency. On the other hand, multi-color light emissions and white light emissions originated from perovskite nanocrystals can be realized via inserting Ln3+ ions into the perovskite crystal lattice, which functioned as quantum cutting. In addition, doping or co-doping Ln3+ ions in perovskite films or devices can effectively facilitate perovskite film growth, tailor the energy band alignment and passivate the defect states, resulting in improved charge carrier transport efficiency or reduced nonradiative recombination. Finally, Ln3+ ions have also been used in the fields of photodetectors and luminescent solar concentrators. These indicate the huge potential of rare-earth metals in improving the perovskite optoelectronic device performances.

Details

Title
Review for Rare-Earth-Modified Perovskite Materials and Optoelectronic Applications
Author
Bobo, Li 1 ; Tian, Feng 2 ; Cui, Xiangqian 1 ; Xiang, Boyuan 1 ; Zhao, Hongbin 3 ; Zhang, Haixi 4 ; Wang, Dengkui 2 ; Li, Jinhua 2 ; Wang, Xiaohua 2 ; Fang, Xuan 5   VIAFID ORCID Logo  ; Qiu, Mingxia 1 ; Wang, Dongbo 6   VIAFID ORCID Logo 

 College of New Materials and New Energies, Shenzhen Technology University, Shenzhen 518118, China; [email protected] (B.L.); [email protected] (X.C.); [email protected] (B.X.) 
 State Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology, Changchun 130012, China; [email protected] (F.T.); [email protected] (D.W.); [email protected] (J.L.); [email protected] (X.W.) 
 State Key Laboratory of Advanced Materials for Smart Sensing, General Research Institute for Nonferrous Metals, Beijing 100088, China; [email protected] 
 School of Science and Engineering, The Chinese University of Hong Kong, Shenzhen 518172, China; [email protected] 
 State Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology, Changchun 130012, China; [email protected] (F.T.); [email protected] (D.W.); [email protected] (J.L.); [email protected] (X.W.); School of Science and Engineering, The Chinese University of Hong Kong, Shenzhen 518172, China; [email protected] 
 Department of Opto-Electronic Information Science, School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China; [email protected] 
First page
1773
Publication year
2022
Publication date
2022
Publisher
MDPI AG
e-ISSN
20794991
Source type
Scholarly Journal
Language of publication
English
ProQuest document ID
2670349008
Copyright
© 2022 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.