It appears you don't have support to open PDFs in this web browser. To view this file, Open with your PDF reader
Abstract
In this study, the undoped and Li-doped ZnO thin films were grown on Si(100) substrate using metal-organic chemical vapor deposition (MOCVD). Zinc acetylacetonate hydrate and lithium acetylacetonate solution were used as ZnO thin film precursor and Li dopant source. The effect of lithium doping on microstructural was characterized using a scanning electron microscope (SEM) and X-ray diffractometer (XRD). XRD diffractogram analysis shows that undoped and Li-doped ZnO thin films have polycrystalline hexagonal wurtzite structures with preferred peak crystal orientation (103). Li doping slightly changes the lattice parameters and cell volume of ZnO thin films through the increase of crystallite size and slightly affects the surface morphology of ZnO thin films. Current-voltage (I-V) measurement and four-point probe method were used to measure the electrical properties of lithium doped ZnO thin films. The electrical conductivity of ZnO thin films increases as Li doping is given compared to undoped films. These results are also supported by the I-V curve of Li-doped ZnO thin films by having a higher slope, indicating improvement in electrical properties.
You have requested "on-the-fly" machine translation of selected content from our databases. This functionality is provided solely for your convenience and is in no way intended to replace human translation. Show full disclaimer
Neither ProQuest nor its licensors make any representations or warranties with respect to the translations. The translations are automatically generated "AS IS" and "AS AVAILABLE" and are not retained in our systems. PROQUEST AND ITS LICENSORS SPECIFICALLY DISCLAIM ANY AND ALL EXPRESS OR IMPLIED WARRANTIES, INCLUDING WITHOUT LIMITATION, ANY WARRANTIES FOR AVAILABILITY, ACCURACY, TIMELINESS, COMPLETENESS, NON-INFRINGMENT, MERCHANTABILITY OR FITNESS FOR A PARTICULAR PURPOSE. Your use of the translations is subject to all use restrictions contained in your Electronic Products License Agreement and by using the translation functionality you agree to forgo any and all claims against ProQuest or its licensors for your use of the translation functionality and any output derived there from. Hide full disclaimer
Details
1 Physics of Electronic Materials Research Group, Department of Physics, Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung , Jalan Ganesha 10, Bandung 40132 , Indonesia