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Abstract
Anisotropic exchange splitting in semiconductor quantum dots results in bright-exciton fine-structure splitting important for quantum information processing. Direct measurement of fine-structure splitting usually requires single/few quantum dots at liquid-helium temperature because of its sensitivity to quantum dot size and shape, whereas measuring and controlling fine-structure splitting at an ensemble level seem to be impossible unless all the dots are made to be nearly identical. Here we report strong bright-exciton fine-structure splitting up to 1.6 meV in solution-processed CsPbI3 perovskite quantum dots, manifested as quantum beats in ensemble-level transient absorption at liquid-nitrogen to room temperature. The splitting is robust to quantum dot size and shape heterogeneity, and increases with decreasing temperature, pointing towards a mechanism associated with orthorhombic distortion of the perovskite lattice. Effective-mass-approximation calculations reveal an intrinsic ‘fine-structure gap’ that agrees well with the observed fine-structure splitting. This gap stems from an avoided crossing of bright excitons confined in orthorhombically distorted quantum dots that are bounded by the pseudocubic {100} family of planes.
Halide perovskites feature highly dynamic lattices, but their impact on exciton fine structure remains unexplored. Here, the authors show that these lattices lead to a bright-exciton fine structure gap, enabling observation of quantum beats in a non-uniform ensemble.
Details
; Wu, Kaifeng 2
1 Chinese Academy of Sciences, State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Dalian, China (GRID:grid.9227.e) (ISNI:0000000119573309); University of Chinese Academy of Sciences, Beijing, China (GRID:grid.410726.6) (ISNI:0000 0004 1797 8419)
2 Chinese Academy of Sciences, State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Dalian, China (GRID:grid.9227.e) (ISNI:0000000119573309)
3 University of Chinese Academy of Sciences, Beijing, China (GRID:grid.410726.6) (ISNI:0000 0004 1797 8419); Chinese Academy of Sciences, Dalian National Laboratory for Clean Energy, Dalian Institute of Chemical Physics, Dalian, China (GRID:grid.9227.e) (ISNI:0000000119573309)
4 Center for Hybrid Organic Inorganic Semiconductors for Energy, Golden, USA (GRID:grid.9227.e)





