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Abstract
P-type ternary switch devices are crucial elements for the practical implementation of complementary ternary circuits. This report demonstrates a p-type ternary device showing three distinct electrical output states with controllable threshold voltage values using a dual-channel dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]-thiophene–graphene barristor structure. To obtain transfer characteristics with distinctively separated ternary states, novel structures called contact-resistive and contact-doping layers were developed. The feasibility of a complementary standard ternary inverter design around 1 V was demonstrated using the experimentally calibrated ternary device model.
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Details
1 Pohang University of Science and Technology, Department of Electrical Engineering, Center for Semiconductor Technology Convergence, Pohang, Republic of Korea (GRID:grid.49100.3c) (ISNI:0000 0001 0742 4007)
2 Gwangju Institute of Science and Technology, School of Materials Science and Engineering, Gwangju, Republic of Korea (GRID:grid.61221.36) (ISNI:0000 0001 1033 9831)
3 Pohang University of Science and Technology, Department of Electrical Engineering, Center for Semiconductor Technology Convergence, Pohang, Republic of Korea (GRID:grid.49100.3c) (ISNI:0000 0001 0742 4007); Institute of Chemical Technology, Department of Specialty Chemicals Technology, Mumbai, India (GRID:grid.44871.3e) (ISNI:0000 0001 0668 0201)